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BCM846SH6327XTSA1

BCM846SH6327XTSA1 Infineon Technologies

Infineon-BCM846S-DS-v01_01-en.pdf
Hersteller: Infineon Technologies
Bipolar Transistors - BJT AF TRANSISTOR
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Lieferzeit 10-14 Tag (e)
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10+0.47 EUR
100+0.29 EUR
500+0.27 EUR
3000+0.23 EUR
9000+0.11 EUR
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Technische Details BCM846SH6327XTSA1 Infineon Technologies

Description: TRANS 2NPN 65V 0.1A PG-SOT363-PO, Supplier Device Package: PG-SOT363-PO, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Current - Collector Cutoff (Max): 15nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).

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BCM846SH6327XTSA1 BCM846SH6327XTSA1 Infineon Technologies bcm846s.pdf?folderId=db3a30431441fb5d011449d262020243&fileId=db3a30431441fb5d011449d337210244 Description: TRANS 2NPN 65V 0.1A PG-SOT363-PO
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCM846SH6327XTSA1 bcm846s.pdf?folderId=db3a30431441fb5d011449d262020243&fileId=db3a30431441fb5d011449d337210244
BCM846SH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN 65V 0.1A PG-SOT363-PO
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH