BCM847DS/DG/B2115 NXP USA Inc.
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4438+ | 0.11 EUR |
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Technische Details BCM847DS/DG/B2115 NXP USA Inc.
Description: TRANS 2NPN 45V 100MA 6-TSOP, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: 2 NPN, Operating Temperature: 150°C (TJ), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: 6-TSOP, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BCM847DS/DG/B2115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BCM847DS/DG/B2115 | Hersteller : NEXPERIA |
 Description: NEXPERIA - BCM847DS/DG/B2115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJTtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCM847DS/DG/B2 115 | Hersteller : NXP Semiconductors |
Description: TRANS 2NPN 45V 100MA 6-TSOP Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Transistor Type: 2 NPN Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 6-TSOP Grade: Automotive Qualification: AEC-Q101 |
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