Technische Details BCP49E6419
Description: BIPOLAR DARLINGTON TRANSISTOR, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V, Frequency - Transition: 200MHz, Supplier Device Package: PG-SOT223-4, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.5 W.
Weitere Produktangebote BCP49E6419
Foto | Bezeichnung | Hersteller | Beschreibung |
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BCP49E6419 | Hersteller : Infineon Technologies |
Description: BIPOLAR DARLINGTON TRANSISTOR Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
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