BCP53H,115 NEXPERIA
Hersteller: NEXPERIA
Description: NEXPERIA - BCP53H,115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Produktrezensionen
Produktbewertung abgeben
Technische Details BCP53H,115 NEXPERIA
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Part Status: Active, Packaging: Bulk, Power - Max: 725 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: SOT-223, Frequency - Transition: 140MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: 175°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote BCP53H,115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
BCP53H,115 | Nexperia USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Part Status: Active Packaging: Bulk Power - Max: 725 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: SOT-223 Frequency - Transition: 140MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Operating Temperature: 175°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BCP53H,115 |
|
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Power - Max: 725 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-223
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Qualification: AEC-Q101
Grade: Automotive
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Part Status: Active
Packaging: Bulk
Power - Max: 725 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-223
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: 175°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH