BCP55H6327XTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesTrans GP BJT NPN 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1997+ | 0.27 EUR |
Produktrezensionen
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Technische Details BCP55H6327XTSA1 Infineon Technologies
Description: TRANS NPN 60V 1A PG-SOT223-4-10, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT223-4-10, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W.
Weitere Produktangebote BCP55H6327XTSA1 nach Preis ab 0.23 EUR bis 0.29 EUR
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BCP55H6327XTSA1 | Hersteller : Infineon Technologies |
Trans GP BJT NPN 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55H6327XTSA1 | Hersteller : Infineon Technologies |
Trans GP BJT NPN 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55H6327XTSA1 | Hersteller : Infineon Technologies |
Description: TRANS NPN 60V 1A PG-SOT223-4-10 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-10 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 46000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCP55H6327XTSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - BCP55H6327XTSA1 - BCP55 - GENERAL PURPOSE TRANSISTOR tariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP55H6327XTSA1 | Hersteller : Infineon Technologies |
Trans GP BJT NPN 60V 1A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BCP55H6327XTSA1 | Hersteller : Infineon Technologies |
Trans GP BJT NPN 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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BCP55H6327XTSA1 | Hersteller : Infineon Technologies |
Description: TRANS NPN 60V 1A PG-SOT223-4-10 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-10 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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BCP55H6327XTSA1 | Hersteller : Infineon Technologies |
Bipolar Transistors - BJT AF TRANSISTORS |
Produkt ist nicht verfügbar |
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BCP55H6327XTSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |