BCP69-16/S500115 NXP
Hersteller: NXPDescription: NXP - BCP69-16/S500115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details BCP69-16/S500115 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Part Status: Active, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Supplier Device Package: SOT-223, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V, Frequency - Transition: 140MHz, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 650 mW, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BCP69-16/S500115
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BCP69-16/S500115 | Hersteller : NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Part Status: Active Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Supplier Device Package: SOT-223 Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Frequency - Transition: 140MHz Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 650 mW Grade: Automotive Qualification: AEC-Q101 |
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