BCP69-16/S500115 NXP
Hersteller: NXP
Description: NXP - BCP69-16/S500115 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details BCP69-16/S500115 NXP
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V, Frequency - Transition: 140MHz, Supplier Device Package: SOT-223, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 650 mW, Qualification: AEC-Q101.
Weitere Produktangebote BCP69-16/S500115
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BCP69-16/S500115 | NXP USA Inc. |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Frequency - Transition: 140MHz Supplier Device Package: SOT-223 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 650 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BCP69-16/S500115 |
|
Hersteller: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 650 mW
Qualification: AEC-Q101
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 650 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH