BCR 112W H6327 Infineon
Hersteller: Infineon
NPN 50V 100mA 140MHz 250mW BCR112WH6327XTSA1 BCR112WH6327 Infineon TBCR112w
Anzahl je Verpackung: 500 Stücke
auf Bestellung 2350 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 0.074 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BCR 112W H6327 Infineon
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V, Supplier Device Package: PG-SOT323-3-1, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 140 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
Weitere Produktangebote BCR 112W H6327 nach Preis ab 0.079 EUR bis 0.77 EUR
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BCR112WH6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 140 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR 112W H6327 | Infineon Technologies |
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
auf Bestellung 21556 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BCR112WH6327 |
|
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 140 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7123+ | 0.079 EUR |
| BCR 112W H6327 |
|
Hersteller: Infineon Technologies
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
auf Bestellung 21556 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.77 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.17 EUR |
| 2500+ | 0.13 EUR |
| 10000+ | 0.12 EUR |