BCR 119S H6327 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 5+ | 0.64 EUR |
| 10+ | 0.48 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.12 EUR |
| 6000+ | 0.1 EUR |
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Technische Details BCR 119S H6327 Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR, Part Status: Active, Supplier Device Package: PG-SOT363-6-1, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 250mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-VSSOP, SC-88, SOT-363, Packaging: Bulk.
Weitere Produktangebote BCR 119S H6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| BCR119SH6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPart Status: Active Supplier Device Package: PG-SOT363-6-1 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BCR119SH6327 |
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Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


