BCR129WH6327

BCR129WH6327 INFINEON TECHNOLOGIES


BCR129.pdf Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 812 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
812+0.089 EUR
1000+ 0.072 EUR
Mindestbestellmenge: 812
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Technische Details BCR129WH6327 INFINEON TECHNOLOGIES

Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Supplier Device Package: PG-SOT323-3-1, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 10 kOhms.

Weitere Produktangebote BCR129WH6327 nach Preis ab 0.089 EUR bis 0.089 EUR

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BCR129WH6327 BCR129WH6327 Hersteller : INFINEON TECHNOLOGIES BCR129.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 150MHz
Base resistor: 10kΩ
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
812+0.089 EUR
Mindestbestellmenge: 812
BCR129WH6327 BCR129WH6327 Hersteller : Infineon Technologies INFNS17180-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
Produkt ist nicht verfügbar
BCR 129W H6327 BCR 129W H6327 Hersteller : Infineon Technologies bcr129series-514298.pdf Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
Produkt ist nicht verfügbar