BCR129WH6327 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIESCategory: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 10kΩ
Frequency: 150MHz
Kind of transistor: BRT
Collector current: 0.1A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| 100+ | 0.72 EUR |
| 250+ | 0.29 EUR |
| 1000+ | 0.072 EUR |
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Technische Details BCR129WH6327 INFINEON TECHNOLOGIES
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Supplier Device Package: PG-SOT323-3-1, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 10 kOhms.
Weitere Produktangebote BCR129WH6327
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BCR129WH6327 | Hersteller : INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 50V Base resistor: 10kΩ Frequency: 150MHz Kind of transistor: BRT Collector current: 0.1A |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
BCR129WH6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms |
Produkt ist nicht verfügbar |
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BCR 129W H6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
Produkt ist nicht verfügbar |