BCR141SE6327

BCR141SE6327 Infineon Technologies


bcr141series.pdf Hersteller: Infineon Technologies
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R
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Technische Details BCR141SE6327 Infineon Technologies

Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V, Frequency - Transition: 130MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: PG-SOT363-6-1, Part Status: Active.

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BCR141SE6327 BCR141SE6327 Hersteller : Infineon Technologies INFNS14747-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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BCR 141S E6327 Hersteller : Infineon Technologies bcr141series-336938.pdf Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
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