BCR185WH6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
| Anzahl | Privatkunde |
|---|---|
| 6571+ | 0.099 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
6571 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details BCR185WH6327 Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3, Packaging: Bulk, Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Supplier Device Package: PG-SOT323-3-1, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote BCR185WH6327 nach Preis ab 0.09 EUR bis 0.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BCR 185W H6327 | Infineon Technologies |
Digital Transistors AF DIGITAL TRANSISTOR |
auf Bestellung 35956 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR185WH6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Frequency: 200MHz Base resistor: 10kΩ Kind of transistor: BRT Base-emitter resistor: 47kΩ |
auf Bestellung 764 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BCR 185W H6327 |
![]() |
Hersteller: Infineon Technologies
Digital Transistors AF DIGITAL TRANSISTOR
Digital Transistors AF DIGITAL TRANSISTOR
auf Bestellung 35956 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.57 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.11 EUR |
| 6000+ | 0.09 EUR |
| BCR185WH6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Kind of transistor: BRT
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.25W; SOT323; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Kind of transistor: BRT
Base-emitter resistor: 47kΩ
auf Bestellung 764 Stücke:
Lieferzeit 14-21 Tag (e)



