BCR 192W H6327 Infineon
Hersteller: Infineon
Transistor PNP bipolar 50V 100mA BCR192WH6327XT BCR192WH6327 TBCR192wh
Anzahl je Verpackung: 100 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BCR 192W H6327 Infineon
Description: TRANS PREBIAS PNP 50V SOT323-3, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 200 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: PG-SOT323-3-1, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk, Transistor Type: PNP - Pre-Biased.
Weitere Produktangebote BCR 192W H6327
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
BCR192WH6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT323-3 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 200 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT323-3-1 DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk Transistor Type: PNP - Pre-Biased |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BCR 192W H6327 | Infineon Technologies |
Digital Transistors AF DIGITAL TRANSISTOR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BCR192WH6327 |
|
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Transistor Type: PNP - Pre-Biased
Description: TRANS PREBIAS PNP 50V SOT323-3
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Transistor Type: PNP - Pre-Biased
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCR 192W H6327 |
|
Hersteller: Infineon Technologies
Digital Transistors AF DIGITAL TRANSISTOR
Digital Transistors AF DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH