BCR196WE6327 Infineon Technologies

Description: TRANS PREBIAS PNP 50V SOT323-3, Resistors Included: R1 and R2, Current - Collector Cutoff (Max): 100nA (ICBO), Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 47 kOhms, Frequency - Transition: 150 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 70 mA, Part Status: Active, Supplier Device Package: PG-SOT323-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.