BCR08PN-AQ

BCR08PN-AQ Diotec Semiconductor


bcr08pn.pdf Hersteller: Diotec Semiconductor
Bipolar Transistors - BJT Digital Transistor, SOT-363, 50V, 100mA, AEC-Q101
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.57 EUR
10+ 0.41 EUR
100+ 0.34 EUR
500+ 0.27 EUR
1000+ 0.24 EUR
3000+ 0.18 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
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Technische Details BCR08PN-AQ Diotec Semiconductor

Description: Biased BJT, SOT-363, NPN+PNP, 2., Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN - Pre-Biased, 1 PNP, Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Frequency - Transition: 170MHz, Resistor - Base (R1): 2.2kOhms, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.

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BCR08PN-AQ Hersteller : Diotec Semiconductor bcr08pn.pdf Trans Digital BJT NPN/PNP 50V 100mA 250mW 6-Pin SOT-363 T/RAutomotive
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BCR08PN-AQ BCR08PN-AQ Hersteller : Diotec Semiconductor AG bcr08pn.pdf Description: Biased BJT, SOT-363, NPN+PNP, 2.
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN - Pre-Biased, 1 PNP
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 170MHz
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar