BCR119E6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistors Included: R1 Only
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Technische Details BCR119E6327HTSA1 Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Supplier Device Package: PG-SOT23, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 4.7 kOhms, Resistors Included: R1 Only.
Weitere Produktangebote BCR119E6327HTSA1 nach Preis ab 0.073 EUR bis 0.073 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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BCR119E6327HTSA1 | Infineon Technologies |
Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BCR119E6327HTSA1 |
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Hersteller: Infineon Technologies
Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39000+ | 0.073 EUR |


