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BCR119E6327HTSA1

BCR119E6327HTSA1 Infineon Technologies

bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistors Included: R1 Only
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Lieferzeit 10-14 Tag (e)
AnzahlPreis
8290+0.06 EUR
Mindestbestellmenge: 8290 Stücke
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Technische Details BCR119E6327HTSA1 Infineon Technologies

Description: TRANS PREBIAS NPN 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Supplier Device Package: PG-SOT23, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 4.7 kOhms, Resistors Included: R1 Only.

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BCR119E6327HTSA1 BCR119E6327HTSA1 Infineon Technologies bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
 Mindestbestellmenge: 39000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR119E6327HTSA1 bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3
BCR119E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Produkt ist nicht verfügbar
Mindestbestellmenge: 39000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH