Produkte > INFINEON TECHNOLOGIES > BCR148E6327HTSA1

BCR148E6327HTSA1 Infineon Technologies


bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details BCR148E6327HTSA1 Infineon Technologies

Description: TRANS PREBIAS NPN 50V SOT23, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 47 kOhms, Frequency - Transition: 100 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Last Time Buy, Supplier Device Package: PG-SOT23, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Weitere Produktangebote BCR148E6327HTSA1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BCR148E6327HTSA1 BCR148E6327HTSA1 Infineon Technologies bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8 Description: TRANS PREBIAS NPN 50V SOT23
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 100 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 39000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR148E6327HTSA1 BCR148E6327HTSA1 Infineon Technologies Infineon-BCR148SERIES-DS-v01_01-en.pdf Digital Transistors NPN Silicon Digital TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR148E6327HTSA1 bcr148series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440144ad602b8
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 100 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 39000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR148E6327HTSA1 Infineon-BCR148SERIES-DS-v01_01-en.pdf
Hersteller: Infineon Technologies
Digital Transistors NPN Silicon Digital TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH