BCR162E6327HTSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRANS PREBIAS PNP 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 448200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7397+ | 0.065 EUR |
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Technische Details BCR162E6327HTSA1 Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V, Supplier Device Package: PG-SOT23, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
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Description: TRANS PREBIAS PNP 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
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