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BCR169WH6327XTSA1

BCR169WH6327XTSA1 Infineon Technologies

bcr169series2.pdf
Hersteller: Infineon Technologies
Trans Digital BJT PNP 50V 0.1A 250mW 3-Pin SOT-323 T/R Automotive AEC-Q101
auf Bestellung 114000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
6757+0.081 EUR
10000+0.071 EUR
100000+0.058 EUR
Mindestbestellmenge: 6757 Stücke
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Technische Details BCR169WH6327XTSA1 Infineon Technologies

Description: TRANS PREBIAS PNP 50V SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Supplier Device Package: PG-SOT323, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms.

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BCR169WH6327XTSA1 BCR169WH6327XTSA1 Infineon Technologies bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1 Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
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BCR169WH6327XTSA1 Infineon Technologies Infineon-BCR169SERIES-DS-v01_01-en-1225406.pdf Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
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BCR169WH6327XTSA1 bcr169series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a373011440313bb302d1
BCR169WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR169WH6327XTSA1 Infineon-BCR169SERIES-DS-v01_01-en-1225406.pdf
Hersteller: Infineon Technologies
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH