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BCR183E6327HTSA1

BCR183E6327HTSA1 Infineon Technologies

bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.072 EUR
6000+0.065 EUR
9000+0.061 EUR
15000+0.057 EUR
21000+0.054 EUR
30000+0.052 EUR
75000+0.046 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details BCR183E6327HTSA1 Infineon Technologies

Description: TRANS PREBIAS PNP 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Supplier Device Package: PG-SOT23, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 10 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.

Weitere Produktangebote BCR183E6327HTSA1 nach Preis ab 0.058 EUR bis 0.36 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
BCR183E6327HTSA1 BCR183E6327HTSA1 Infineon Technologies bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3 Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 102019 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
81+0.22 EUR
131+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR183E6327HTSA1 BCR183E6327HTSA1 Infineon Technologies Infineon-BCR183SERIES-DS-v01_01-en.pdf Digital Transistors PNP Silicon Digital TRANSISTOR
auf Bestellung 25910 Stücke:
Lieferzeit 10-14 Tag (e)
8+0.36 EUR
15+0.19 EUR
100+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
3000+0.062 EUR
6000+0.058 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR183E6327HTSA1 Infineon bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BCR183E6327HTSA1 bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3
BCR183E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 102019 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+0.35 EUR
81+0.22 EUR
131+0.13 EUR
500+0.099 EUR
1000+0.087 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR183E6327HTSA1 Infineon-BCR183SERIES-DS-v01_01-en.pdf
BCR183E6327HTSA1
Hersteller: Infineon Technologies
Digital Transistors PNP Silicon Digital TRANSISTOR
auf Bestellung 25910 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+0.36 EUR
15+0.19 EUR
100+0.14 EUR
500+0.1 EUR
1000+0.088 EUR
3000+0.062 EUR
6000+0.058 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR183E6327HTSA1 bcr183series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301144036c8c902d3
Hersteller: Infineon
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH