BCR 191W H6327 Infineon
Hersteller: Infineon
PNP 50V 100mA 200MHz 250mW BCR191WH6327XTSA1 BCR191WH6327 Infineon TBCR191w
Anzahl je Verpackung: 500 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.063 EUR |
Produktrezensionen
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Technische Details BCR 191W H6327 Infineon
Description: BIPOLAR DIGITAL TRANSISTOR, Resistor - Emitter Base (R2): 22 kOhms, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 200 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: PG-SOT323-3-1, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.
Weitere Produktangebote BCR 191W H6327 nach Preis ab 0.066 EUR bis 0.74 EUR
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BCR191WH6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 200 MHz Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT323-3-1 DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Bulk |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCR 191W H6327 | Infineon Technologies |
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR |
auf Bestellung 3930 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCR191WH6327 |
|
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9000+ | 0.066 EUR |
| BCR 191W H6327 |
|
Hersteller: Infineon Technologies
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
auf Bestellung 3930 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.6 EUR |
| 100+ | 0.32 EUR |
| 500+ | 0.21 EUR |