BCR22PNH6327XTSA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 9+ | 0.35 EUR |
| 10+ | 0.28 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.14 EUR |
| 3000+ | 0.086 EUR |
| 6000+ | 0.077 EUR |
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Technische Details BCR22PNH6327XTSA1 Infineon Technologies
Description: TRANS PREBIAS 1NPN 1PNP SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V, Frequency - Transition: 130MHz, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: PG-SOT363-PO, Part Status: Last Time Buy.
Weitere Produktangebote BCR22PNH6327XTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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BCR22PNH6327XTSA1 | Infineon Technologies |
 Description: TRANS PREBIAS 1NPN 1PNP SOT363Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 18000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
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BCR22PNH6327XTSA1 | Infineon Technologies |
Description: TRANS PREBIAS 1NPN 1PNP SOT363 Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Frequency - Transition: 130MHz Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: PG-SOT363-PO Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BCR22PNH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS PREBIAS 1NPN 1PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Description: TRANS PREBIAS 1NPN 1PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Mindestbestellmenge: 18000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCR22PNH6327XTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS PREBIAS 1NPN 1PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Description: TRANS PREBIAS 1NPN 1PNP SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Frequency - Transition: 130MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: PG-SOT363-PO
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH