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BCR523E6433HTMA1 Infineon

bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
Hersteller: Infineon

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Technische Details BCR523E6433HTMA1 Infineon

Description: TRANS PREBIAS NPN 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Supplier Device Package: PG-SOT23, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 330 mW, Frequency - Transition: 100 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

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BCR523E6433HTMA1 BCR523E6433HTMA1 Infineon Technologies bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR523E6433HTMA1 Infineon Technologies bcr523series-55767.pdf Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR523E6433HTMA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523E6433HTMA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 100 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR523E6433HTMA1 bcr523series-55767.pdf
Hersteller: Infineon Technologies
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH