BCR555E6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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Technische Details BCR555E6327HTSA1 Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Supplier Device Package: PG-SOT23, Part Status: Last Time Buy, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 330 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote BCR555E6327HTSA1 nach Preis ab 0.1 EUR bis 1.59 EUR
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BCR555E6327HTSA1 | Infineon Technologies |
Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR555E6327HTSA1 | Infineon Technologies |
Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101 |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR555E6327HTSA1 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR555E6327HTSA1 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: PG-SOT23 Part Status: Last Time Buy Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 330 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
auf Bestellung 11081 Stücke: Lieferzeit 10-14 Tag (e) |
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BCR555E6327HTSA1 | Infineon |
PNP 500mA 50V 150mW BCR555 Infineon TBCR555 Anzahl je Verpackung: 100 Stücke |
auf Bestellung 925 Stücke: Lieferzeit 7-14 Tag (e) |
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BCR555E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCR555E6327HTSA1 |
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Hersteller: Infineon Technologies
Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4262+ | 0.13 EUR |
| BCR555E6327HTSA1 |
|
Hersteller: Infineon Technologies
Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
Trans Digital BJT PNP 50V 0.5A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 18000+ | 0.13 EUR |
| BCR555E6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
| BCR555E6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: PG-SOT23
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 330 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 11081 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 45+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.17 EUR |
| BCR555E6327HTSA1 |
|
auf Bestellung 925 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| BCR555E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 1.59 EUR |
| 538+ | 0.13 EUR |
| 596+ | 0.12 EUR |
| 705+ | 0.1 EUR |