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BCR573E6433HTMA1 Infineon Technologies


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Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Frequency - Transition: 150 MHz
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
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Technische Details BCR573E6433HTMA1 Infineon Technologies

Description: TRANS PREBIAS PNP 50V SOT23, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 1 kOhms, Frequency - Transition: 150 MHz, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: PG-SOT23, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2.