BCW 60D E6327 Infineon
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.054 EUR |
Produktrezensionen
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Technische Details BCW 60D E6327 Infineon
Description: TRANS NPN 32V 0.1A SOT23, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 32 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: PG-SOT23, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V, Current - Collector Cutoff (Max): 20nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk.
Weitere Produktangebote BCW 60D E6327 nach Preis ab 0.065 EUR bis 0.61 EUR
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BCW60DE6327 | Infineon Technologies |
 Description: TRANS NPN 32V 0.1A SOT23Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 13852 Stücke: Lieferzeit 10-14 Tag (e) |
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BCW 60D E6327 | Infineon Technologies |
Description: TRANS NPN 32V 0.1A SOT23 Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: PG-SOT23 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCW 60D E6327 | Infineon Technologies |
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR |
auf Bestellung 48541 Stücke: Lieferzeit 10-14 Tag (e) |
|
| BCW60DE6327 |
|
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 13852 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7397+ | 0.065 EUR |
| BCW 60D E6327 |
|
Hersteller: Infineon Technologies
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: TRANS NPN 32V 0.1A SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8013+ | 0.07 EUR |
| BCW 60D E6327 |
|
Hersteller: Infineon Technologies
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
auf Bestellung 48541 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.27 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.1 EUR |
| 9000+ | 0.079 EUR |
| 24000+ | 0.074 EUR |