BCW33LT3G

Hersteller: ON Semiconductor
Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R

Hersteller: ON Semiconductor
Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R

Hersteller: onsemi
Description: TRANS NPN 32V 0.1A SOT23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)

Hersteller: ON Semiconductor
Trans GP BJT NPN 32V 0.1A 300mW 3-Pin SOT-23 T/R

Hersteller: onsemi
Bipolar Transistors - BJT 100mA 32V NPN

Hersteller: onsemi
Description: TRANS NPN 32V 0.1A SOT23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN

Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.225W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Polarisation: bipolar
Type of transistor: NPN
Current gain: 420...800
Kind of package: reel; tape
Collector current: 0.1A
Collector-emitter voltage: 32V
Power dissipation: 0.225W

Hersteller: ONSEMI
Description: ONSEMI - BCW33LT3G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)