BCW61CE6327 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: TRANS PNP 32V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6869+ | 0.064 EUR |
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Technische Details BCW61CE6327 Infineon Technologies
Description: TRANS PNP 32V 0.1A SOT23, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V, Frequency - Transition: 250MHz, Supplier Device Package: PG-SOT23, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 330 mW.
Weitere Produktangebote BCW61CE6327 nach Preis ab 0.074 EUR bis 1.57 EUR
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BCW 61C E6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR |
auf Bestellung 20596 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCW61CE6327 | Hersteller : Infineon |
Транз. Бипол. ММ PNP SOT23 Uceo=-32V; Ic=-0,1A; f=100MHz; Pdmax=0,25W; hfe=250/460 |
auf Bestellung 1245 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCW61CE6327 | Hersteller : INFINEON |
PNP Uce=32V, Ic=100mA, P=330mW, B>40, SOT23 |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW 61C E6327 | Hersteller : Infineon Technologies |
Description: TRANS PNP 32V 0.1A SOT23 Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
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| BCW61CE6327 | Hersteller : onsemi |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |