BCW65ALT1G
Produktcode: 53614
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Hersteller:
Transistoren > Bipolar-Transistoren NPN
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Weitere Produktangebote BCW65ALT1G nach Preis ab 0.05 EUR bis 0.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BCW65ALT1G | onsemi |
Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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BCW65ALT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 3020 Stücke: Lieferzeit 14-21 Tag (e) |
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BCW65ALT1G | onsemi |
Bipolar Transistors - BJT 100mA 60V NPN |
auf Bestellung 15873 Stücke: Lieferzeit 10-14 Tag (e) |
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BCW65ALT1G | onsemi |
Description: TRANS NPN 32V 0.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 225 mW |
auf Bestellung 45988 Stücke: Lieferzeit 10-14 Tag (e) |
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BCW65ALT1G | ON Semiconductor |
Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R |
auf Bestellung 408 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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BCW65ALT1G | ON Semiconductor |
Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R |
auf Bestellung 882 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 459 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| BCW65ALT1G | ONSEMI |
Description: ONSEMI - BCW65ALT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2597 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2597 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BCW65ALT1G |
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Hersteller: onsemi
Description: TRANS NPN 32V 0.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
Description: TRANS NPN 32V 0.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.075 EUR |
| 6000+ | 0.067 EUR |
| 9000+ | 0.063 EUR |
| 15000+ | 0.058 EUR |
| 21000+ | 0.056 EUR |
| 30000+ | 0.052 EUR |
| BCW65ALT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 3020 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 715+ | 0.12 EUR |
| 1042+ | 0.082 EUR |
| 1250+ | 0.068 EUR |
| 1417+ | 0.06 EUR |
| 3000+ | 0.05 EUR |
| BCW65ALT1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 100mA 60V NPN
Bipolar Transistors - BJT 100mA 60V NPN
auf Bestellung 15873 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.35 EUR |
| 16+ | 0.21 EUR |
| 100+ | 0.13 EUR |
| 500+ | 0.096 EUR |
| 1000+ | 0.083 EUR |
| 3000+ | 0.069 EUR |
| BCW65ALT1G |
|
Hersteller: onsemi
Description: TRANS NPN 32V 0.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
Description: TRANS NPN 32V 0.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 225 mW
auf Bestellung 45988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 56+ | 0.38 EUR |
| 91+ | 0.23 EUR |
| 148+ | 0.14 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.09 EUR |
| BCW65ALT1G |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R
Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R
auf Bestellung 408 Stücke:
Lieferzeit 14-21 Tag (e)
| BCW65ALT1G |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R
Trans GP BJT NPN 32V 0.8A 300mW 3-Pin SOT-23 T/R
auf Bestellung 882 Stücke:
Lieferzeit 14-21 Tag (e)
| BCW65ALT1G |
|
Hersteller: ONSEMI
Description: ONSEMI - BCW65ALT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
Description: ONSEMI - BCW65ALT1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2597 Stücke:
Lieferzeit 14-21 Tag (e)