BCW68FE6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans GP BJT PNP 45V 0.8A 330mW 3-Pin SOT-23 T/R Automotive AEC-Q101
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Technische Details BCW68FE6327HTSA1 Infineon Technologies
Description: TRANS PNP 45V 0.8A PG-SOT23, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 800 mA, Part Status: Last Time Buy, Supplier Device Package: PG-SOT23, Frequency - Transition: 200MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V, Current - Collector Cutoff (Max): 20nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote BCW68FE6327HTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BCW68FE6327HTSA1 | Infineon Technologies |
Description: TRANS PNP 45V 0.8A PG-SOT23 Power - Max: 330 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 800 mA Part Status: Last Time Buy Supplier Device Package: PG-SOT23 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
BCW68FE6327HTSA1 | Infineon Technologies |
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BCW68FE6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.8A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 45V 0.8A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 42000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCW68FE6327HTSA1 |
|
Hersteller: Infineon Technologies
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 42000 Stücke
Im Einkaufswagen
Stück im Wert von UAH