BCW89-QR Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: BCW89-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Description: BCW89-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-236AB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.056 EUR |
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Technische Details BCW89-QR Nexperia USA Inc.
Description: BCW89-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: TO-236AB, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 250 mW.
Weitere Produktangebote BCW89-QR nach Preis ab 0.068 EUR bis 0.33 EUR
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BCW89-QR | Hersteller : Nexperia USA Inc. |
Description: BCW89-Q/SOT23/TO-236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-236AB Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 250 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCW89-QR | Hersteller : Nexperia | Bipolar Transistors - BJT BCW89-Q/SOT23/TO-236AB |
Produkt ist nicht verfügbar |