BCX42E6327 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 290+ | 0.25 EUR |
| 468+ | 0.15 EUR |
| 562+ | 0.13 EUR |
| 650+ | 0.11 EUR |
| 1000+ | 0.1 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BCX42E6327 INFINEON TECHNOLOGIES
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 100mA, 1V, Frequency - Transition: 150MHz, Supplier Device Package: PG-SOT23-3-1, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 125 V, Power - Max: 330 mW.
Weitere Produktangebote BCX42E6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| BCX 42 E6327 | Hersteller : Infineon Technologies |
Транзистор PNP, Ptot, Вт = 0,33, Uceo, В = 125, Ic = 800 мА, Тип монт. = smd, ft, МГц = 150, hFE = 40 @ 200 мA, 1 В, Icutoff-max = 10 мкА, Uceo(sat), В @ Ic, Ib = 0,9 @ 30 мA, 300 мА, Тексп, °С = -65...+150,... Група товару: Транзистори Корпус: SOT-23-3 О Anzahl je Verpackung: 3000 Stücke |
verfügbar 61 Stücke: |
||
| BCX42E6327 | Hersteller : Infineon Technologies |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 100mA, 1V Frequency - Transition: 150MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 125 V Power - Max: 330 mW |
Produkt ist nicht verfügbar |
||
 |
BCX 42 E6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - BJT PNP Silicn AF/Switch TRANSISTOR |
Produkt ist nicht verfügbar |