BCX70GE6327 Infineon Technologies
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
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Technische Details BCX70GE6327 Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT23, Current - Collector Cutoff (Max): 20nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Bulk, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: PG-SOT23, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V.
Weitere Produktangebote BCX70GE6327 nach Preis ab 0.058 EUR bis 0.41 EUR
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BCX 70G E6327 | Infineon Technologies |
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR |
auf Bestellung 33035 Stücke: Lieferzeit 10-14 Tag (e) |
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| BCX 70G E6327 |
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Hersteller: Infineon Technologies
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
auf Bestellung 33035 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 0.41 EUR |
| 11+ | 0.28 EUR |
| 100+ | 0.17 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.079 EUR |
| 3000+ | 0.067 EUR |
| 6000+ | 0.058 EUR |


