BCY58-VII PBFREE Central Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.08 EUR |
| 10+ | 3.39 EUR |
| 100+ | 2.7 EUR |
| 250+ | 2.49 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.07 EUR |
| 2000+ | 1.78 EUR |
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Technische Details BCY58-VII PBFREE Central Semiconductor
Description: 32V 100MA 340MW TH TRANSISTOR-SM, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Box, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 32 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: TO-18, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V.
Weitere Produktangebote BCY58-VII PBFREE
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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BCY58-VII PBFREE | Central Semiconductor Corp |
Description: 32V 100MA 340MW TH TRANSISTOR-SM Current - Collector Cutoff (Max): 10nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Box Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-18 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BCY58-VII PBFREE |
Hersteller: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-18
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH

