BD135TG ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 946+ | 0.69 EUR |
| 1026+ | 0.63 EUR |
| 10000+ | 0.55 EUR |
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Technische Details BD135TG ON Semiconductor
Description: TRANS NPN 45V 1.5A TO-126, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V, Supplier Device Package: TO-126, Part Status: Active, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 1.25 W.
Weitere Produktangebote BD135TG nach Preis ab 0.58 EUR bis 2.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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BD135TG | ON Semiconductor |
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3+Tab) TO-225 Tube |
auf Bestellung 6950 Stücke: Lieferzeit 14-21 Tag (e) |
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BD135TG | ON Semiconductor |
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3+Tab) TO-225 Tube |
auf Bestellung 9695 Stücke: Lieferzeit 14-21 Tag (e) |
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BD135TG | onsemi |
Bipolar Transistors - BJT 1.5 A, 45V NPN Power Bipolar Junction Transistor |
auf Bestellung 535 Stücke: Lieferzeit 10-14 Tag (e) |
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BD135TG | onsemi |
Description: TRANS NPN 45V 1.5A TO-126Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.25 W |
auf Bestellung 222 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD135TG | ONSEMI |
Description: ONSEMI - BD135TG - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJTtariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (23-Jan-2024) |
auf Bestellung 16645 Stücke: Lieferzeit 14-21 Tag (e) |
|
| BD135TG |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3+Tab) TO-225 Tube
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3+Tab) TO-225 Tube
auf Bestellung 6950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 946+ | 0.69 EUR |
| 1026+ | 0.63 EUR |
| BD135TG |
![]() |
Hersteller: ON Semiconductor
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3+Tab) TO-225 Tube
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3+Tab) TO-225 Tube
auf Bestellung 9695 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 946+ | 0.69 EUR |
| 1026+ | 0.63 EUR |
| BD135TG |
![]() |
Hersteller: onsemi
Bipolar Transistors - BJT 1.5 A, 45V NPN Power Bipolar Junction Transistor
Bipolar Transistors - BJT 1.5 A, 45V NPN Power Bipolar Junction Transistor
auf Bestellung 535 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.28 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.73 EUR |
| 1700+ | 0.65 EUR |
| 5100+ | 0.58 EUR |
| BD135TG |
![]() |
Hersteller: onsemi
Description: TRANS NPN 45V 1.5A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Description: TRANS NPN 45V 1.5A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
auf Bestellung 222 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.32 EUR |
| 50+ | 1.08 EUR |
| 100+ | 0.96 EUR |
| BD135TG |
![]() |
Hersteller: ONSEMI
Description: ONSEMI - BD135TG - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (23-Jan-2024)
Description: ONSEMI - BD135TG - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (23-Jan-2024)
auf Bestellung 16645 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1250+ | 0.68 EUR |



