Technische Details BD14016S ON Semiconductor
Description: TRANS PNP 80V 1.5A TO-126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.25 W.
Weitere Produktangebote BD14016S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
BD14016S | Hersteller : ON Semiconductor |
 Trans GP BJT PNP 80V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bag |
Produkt ist nicht verfügbar |
|
 |
BD14016S | Hersteller : ON Semiconductor |
Trans GP BJT PNP 80V 1.5A 1250mW 3-Pin(3+Tab) TO-126 Bag |
Produkt ist nicht verfügbar |
|
 |
BD14016S | Hersteller : onsemi |
Description: TRANS PNP 80V 1.5A TO-126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.25 W |
Produkt ist nicht verfügbar |
|
 |
BD14016S | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT PNP Epitaxial Sil |
Produkt ist nicht verfügbar |
|
 |
BD14016S | Hersteller : ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.25W; TO126ISO Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.25W Case: TO126ISO Current gain: 100...250 Mounting: THT Kind of package: bulk |
Produkt ist nicht verfügbar |