BD241BTU Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 80V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
| Anzahl | Preis |
|---|---|
| 757+ | 0.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BD241BTU Fairchild Semiconductor
Description: TRANS NPN 80V 3A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A, Current - Collector Cutoff (Max): 300µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V, Supplier Device Package: TO-220-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 40 W.
Weitere Produktangebote BD241BTU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
BD241BTU | onsemi |
Description: TRANS NPN 80V 3A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
BD241BTU | onsemi / Fairchild |
Bipolar Transistors - BJT NPN Epitaxial Sil |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BD241BTU |
|
Hersteller: onsemi
Description: TRANS NPN 80V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS NPN 80V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 600mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BD241BTU |
|
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Epitaxial Sil
Bipolar Transistors - BJT NPN Epitaxial Sil
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH