BD433S Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 22V 4A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 22 V
Power - Max: 36 W
Description: TRANS NPN 22V 4A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 22 V
Power - Max: 36 W
auf Bestellung 11500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1044+ | 0.7 EUR |
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Technische Details BD433S Fairchild Semiconductor
Description: TRANS NPN 22V 4A TO126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V, Frequency - Transition: 3MHz, Supplier Device Package: TO-126-3, Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 22 V, Power - Max: 36 W.
Weitere Produktangebote BD433S nach Preis ab 0.74 EUR bis 1.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BD433S | Hersteller : onsemi |
Description: TRANS NPN 22V 4A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 22 V Power - Max: 36 W |
auf Bestellung 1224 Stücke: Lieferzeit 21-28 Tag (e) |
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BD433S | Hersteller : ON Semiconductor / Fairchild | Bipolar Transistors - BJT NPN Epitaxial Sil |
auf Bestellung 1936 Stücke: Lieferzeit 14-28 Tag (e) |
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BD433S | Hersteller : ON Semiconductor | Trans GP BJT NPN 22V 4A 36000mW 3-Pin(3+Tab) TO-126 Bag |
Produkt ist nicht verfügbar |
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BD433S | Hersteller : onsemi |
Description: TRANS NPN 22V 4A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 22 V Power - Max: 36 W |
Produkt ist nicht verfügbar |