BD434S ON Semiconductor
auf Bestellung 3785 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 920+ | 0.17 EUR |
| 1069+ | 0.14 EUR |
| 1188+ | 0.12 EUR |
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Technische Details BD434S ON Semiconductor
Description: POWER BIPOLAR TRANSISTOR, 4A, 22, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V, Frequency - Transition: 3MHz, Supplier Device Package: TO-126-3, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 22 V, Power - Max: 36 W.
Weitere Produktangebote BD434S nach Preis ab 0.17 EUR bis 0.5 EUR
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BD434S | Hersteller : ON Semiconductor |
 Trans GP BJT PNP 22V 4A 36000mW 3-Pin(3+Tab) TO-126 Bag |
auf Bestellung 3785 Stücke: Lieferzeit 14-21 Tag (e) |
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BD434S | Hersteller : onsemi |
Description: POWER BIPOLAR TRANSISTOR, 4A, 22 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 22 V Power - Max: 36 W |
auf Bestellung 26375 Stücke: Lieferzeit 10-14 Tag (e) |
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BD434S | Hersteller : Fairchild Semiconductor |
Description: POWER BIPOLAR TRANSISTOR, 4A, 22 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 22 V Power - Max: 36 W |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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BD434S | Hersteller : ON Semiconductor / Fairchild |
Bipolar Transistors - BJT PNP Epitaxial Sil |
auf Bestellung 1573 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD434S |
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auf Bestellung 62500 Stücke: Lieferzeit 21-28 Tag (e) |
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| BD434S | Hersteller : ONSEMI |
Description: ONSEMI - BD434S - TRANSISTOR, BIPOLAR, PNP, 22V, 4A-TO126 tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 26375 Stücke: Lieferzeit 14-21 Tag (e) |
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BD434S | Hersteller : ON Semiconductor |
Trans GP BJT PNP 22V 4A 36000mW 3-Pin(3+Tab) TO-126 Bag |
Produkt ist nicht verfügbar |
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BD434S | Hersteller : onsemi |
Description: TRANS PNP 22V 4A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 5V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 22 V Power - Max: 36 W |
Produkt ist nicht verfügbar |