BD436TG onsemi
Hersteller: onsemiDescription: TRANS PNP 32V 4A TO-126
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 36 W
auf Bestellung 68989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 888+ | 0.57 EUR |
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Technische Details BD436TG onsemi
Description: TRANS PNP 32V 4A TO-126, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V, Frequency - Transition: 3MHz, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 32 V, Power - Max: 36 W.
Weitere Produktangebote BD436TG nach Preis ab 0.49 EUR bis 0.64 EUR
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| BD436TG | Hersteller : ONSEMI |
Description: ONSEMI - BD436TG - BD436TG, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 69389 Stücke: Lieferzeit 14-21 Tag (e) |
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BD436TG | Hersteller : ON Semiconductor |
Trans GP BJT PNP 32V 4A 36000mW 3-Pin(3+Tab) TO-225 Tube |
Produkt ist nicht verfügbar |
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| BD436TG | Hersteller : ON Semiconductor |
Trans GP BJT PNP 32V 4A 36000mW 3-Pin(3+Tab) TO-225 Tube |
Produkt ist nicht verfügbar |
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BD436TG | Hersteller : onsemi |
Description: TRANS PNP 32V 4A TO-126 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 36 W |
Produkt ist nicht verfügbar |
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BD436TG | Hersteller : onsemi |
Bipolar Transistors - BJT 4A 32V 36W PNP |
Produkt ist nicht verfügbar |