BD439S

BD439S ON Semiconductor


1067823634252627bd439.pdf Hersteller: ON Semiconductor
Trans GP BJT NPN 60V 4A 36000mW 3-Pin(3+Tab) TO-126 Bag
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Lieferzeit 14-21 Tag (e)
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Technische Details BD439S ON Semiconductor

Description: TRANS NPN 60V 4A TO126-3, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V, Frequency - Transition: 3MHz, Supplier Device Package: TO-126-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 36 W.

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BD439S BD439S Hersteller : ON Semiconductor / Fairchild BD439-1121957.pdf Bipolar Transistors - BJT NPN TRANS TO-126
auf Bestellung 464 Stücke:
Lieferzeit 14-28 Tag (e)
BD439S BD439S Hersteller : ON Semiconductor 1067823634252627bd439.pdf Trans GP BJT NPN 60V 4A 36000mW 3-Pin(3+Tab) TO-126 Bag
Produkt ist nicht verfügbar
BD439S BD439S Hersteller : onsemi Description: TRANS NPN 60V 4A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 36 W
Produkt ist nicht verfügbar