Technische Details BD538K
Description: TRANS PNP 80V 8A TO-220-3, Power - Max: 50 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 8 A, Part Status: Obsolete, Supplier Device Package: TO-220-3, Frequency - Transition: 12MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.
Weitere Produktangebote BD538K
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
BD538K | onsemi |
Description: TRANS PNP 80V 8A TO-220-3Power - Max: 50 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 8 A Part Status: Obsolete Supplier Device Package: TO-220-3 Frequency - Transition: 12MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1200 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
BD538K | onsemi / Fairchild |
Bipolar Transistors - BJT PNP Epitaxial Silicon Transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BD538K |
![]() |
Hersteller: onsemi
Description: TRANS PNP 80V 8A TO-220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 12MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: TRANS PNP 80V 8A TO-220-3
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 12MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1200 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BD538K |
![]() |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Epitaxial Silicon Transistor
Bipolar Transistors - BJT PNP Epitaxial Silicon Transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



