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BD676G

BD676G onsemi

bd676-d.pdf
Hersteller: onsemi
Description: TRANS PNP DARL 45V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 40 W
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
528+0.86 EUR
Mindestbestellmenge: 528
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Technische Details BD676G onsemi

Description: TRANS PNP DARL 45V 4A TO-126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V, Supplier Device Package: TO-126, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 40 W.

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BD676G BD676G onsemi bd676-d.pdf Description: TRANS PNP DARL 45V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 40 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD676G BD676G onsemi BD676_D-1802216.pdf Darlington Transistors 4A 45V 40W PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD676G bd676-d.pdf
BD676G
Hersteller: onsemi
Description: TRANS PNP DARL 45V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 40 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD676G BD676_D-1802216.pdf
BD676G
Hersteller: onsemi
Darlington Transistors 4A 45V 40W PNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH