BD681STU Fairchild/ON Semiconductor
Hersteller: Fairchild/ON Semiconductor
Транзистор складений Дарлінгтона, Ptot, Вт = 40, Тип стр. = NPN, Uceo, В = 100, Ic = 4 А, Тип монт. = вивідний, hFE = 750 @ 1,5 A, 3 В, Icutoff-max = 500 мкА, Uceo(sat), В @ Ic, Ib = 2,5 @ 30 мA, 1.5 A, Тексп, °С = -65...+150,... Група товару: Транзистори
Anzahl je Verpackung: 60 Stücke
verfügbar 107 Stücke:
Produktrezensionen
Produktbewertung abgeben
Technische Details BD681STU Fairchild/ON Semiconductor
Description: TRANS NPN DARL 100V 4A TO-126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A, Current - Collector Cutoff (Max): 500µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V, Supplier Device Package: TO-126-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 40 W.
Weitere Produktangebote BD681STU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
BD681STU | Hersteller : onsemi |
Description: TRANS NPN DARL 100V 4A TO-126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
|
 |
BD681STU | Hersteller : onsemi / Fairchild |
Darlington Transistors NPN Epitaxial Sil |
Produkt ist nicht verfügbar |