BF2040E6814HTSA1 INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT
Features of semiconductor devices: dual gate
Type of transistor: N-MOSFET
Kind of transistor: RF
Polarisation: unipolar
Drain current: 40mA
Power dissipation: 0.2W
Drain-source voltage: 8V
Gate-source voltage: ±10V
Open-loop gain: 23dB
Frequency: 800MHz
Kind of package: reel; tape
Electrical mounting: SMT
Case: SOT143
Kind of channel: depletion
| Anzahl | Preis |
|---|---|
| 255+ | 0.28 EUR |
| 370+ | 0.19 EUR |
| 420+ | 0.17 EUR |
| 500+ | 0.16 EUR |
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Technische Details BF2040E6814HTSA1 INFINEON TECHNOLOGIES
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; RF; 8V; 40mA; 200mW; SOT143; SMT, Features of semiconductor devices: dual gate, Type of transistor: N-MOSFET, Kind of transistor: RF, Polarisation: unipolar, Drain current: 40mA, Power dissipation: 0.2W, Drain-source voltage: 8V, Gate-source voltage: ±10V, Open-loop gain: 23dB, Frequency: 800MHz, Kind of package: reel; tape, Electrical mounting: SMT, Case: SOT143, Kind of channel: depletion.
Weitere Produktangebote BF2040E6814HTSA1 nach Preis ab 0.14 EUR bis 0.51 EUR
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BF2040E6814HTSA1 | Infineon Technologies |
RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 5V |
auf Bestellung 1139 Stücke: Lieferzeit 10-14 Tag (e) |
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| BF2040E6814HTSA1 |
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Hersteller: Infineon Technologies
RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 5V
RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 5V
auf Bestellung 1139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.51 EUR |
| 10+ | 0.41 EUR |
| 100+ | 0.29 EUR |
| 1000+ | 0.19 EUR |
| 2500+ | 0.17 EUR |
| 10000+ | 0.15 EUR |
| 18000+ | 0.14 EUR |