BF771E6327HTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
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Technische Details BF771E6327HTSA1 Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 10dB ~ 15dB, Power - Max: 580mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz, Supplier Device Package: PG-SOT23, Part Status: Active.
Weitere Produktangebote BF771E6327HTSA1 nach Preis ab 0.17 EUR bis 0.47 EUR
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BF771E6327HTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10dB ~ 15dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23 Part Status: Active |
auf Bestellung 15036 Stücke: Lieferzeit 10-14 Tag (e) |
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BF771E6327HTSA1 | Infineon Technologies |
RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW |
auf Bestellung 22582 Stücke: Lieferzeit 10-14 Tag (e) |
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| BF771E6327HTSA1 | Infineon |
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auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| BF771E6327HTSA1 |
|
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10dB ~ 15dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 15036 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 65+ | 0.27 EUR |
| 74+ | 0.24 EUR |
| 100+ | 0.21 EUR |
| 250+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| BF771E6327HTSA1 |
|
Hersteller: Infineon Technologies
RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW
RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW
auf Bestellung 22582 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.47 EUR |
| 10+ | 0.29 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.22 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.19 EUR |
| BF771E6327HTSA1 |
|
Hersteller: Infineon
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)