BF888H6327XTSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: RF TRANS NPN 4V 47GHZ PG SOT-343
Current - Collector (Ic) (Max): 30mA
Power - Max: 160mW
Gain: 27dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 47GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V
Voltage - Collector Emitter Breakdown (Max): 4V
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Technische Details BF888H6327XTSA1 Infineon Technologies
Description: RF TRANS NPN 4V 47GHZ PG SOT-343, Part Status: Active, Supplier Device Package: PG-SOT343-4-2, Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz, Frequency - Transition: 47GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 25A, 3V, Voltage - Collector Emitter Breakdown (Max): 4V, Current - Collector (Ic) (Max): 30mA, Power - Max: 160mW, Gain: 27dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-82A, SOT-343, Packaging: Tape & Reel (TR).
Weitere Produktangebote BF888H6327XTSA1 nach Preis ab 0.3 EUR bis 0.97 EUR
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BF888H6327XTSA1 | Infineon Technologies |
RF Bipolar Transistors RF BIP TRANSISTOR |
auf Bestellung 2709 Stücke: Lieferzeit 10-14 Tag (e) |
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| BF888H6327XTSA1 |
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Hersteller: Infineon Technologies
RF Bipolar Transistors RF BIP TRANSISTOR
RF Bipolar Transistors RF BIP TRANSISTOR
auf Bestellung 2709 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.97 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.38 EUR |
| 3000+ | 0.32 EUR |
| 9000+ | 0.3 EUR |