BFG505/X,215 NXP Semiconductors
Hersteller: NXP Semiconductors
Description: RF TRANS NPN 15V 9GHZ SOT-143B
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 18mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V
Frequency - Transition: 9GHz
Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz
Supplier Device Package: SOT-143B
| Anzahl | Preis |
|---|---|
| 1135+ | 0.4 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BFG505/X,215 NXP Semiconductors
Description: RF TRANS NPN 15V 9GHZ SOT-143B, Supplier Device Package: SOT-143B, Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz, Frequency - Transition: 9GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V, Voltage - Collector Emitter Breakdown (Max): 15V, Current - Collector (Ic) (Max): 18mA, Power - Max: 150mW, Operating Temperature: 175°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-253-4, TO-253AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote BFG505/X,215
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
BFG505/X,215 | Hersteller : NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SOT-143B Supplier Device Package: SOT-143B Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz Frequency - Transition: 9GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 18mA Power - Max: 150mW Operating Temperature: 175°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
|
|
|
BFG505/X,215 | Hersteller : NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SOT-143B Supplier Device Package: SOT-143B Noise Figure (dB Typ @ f): 1.2dB ~ 1.9dB @ 900MHz ~ 2GHz Frequency - Transition: 9GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 6V Voltage - Collector Emitter Breakdown (Max): 15V Current - Collector (Ic) (Max): 18mA Power - Max: 150mW Operating Temperature: 175°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-253-4, TO-253AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
|
 |
BFG505/X,215 | Hersteller : NXP Semiconductors |
RF Bipolar Transistors TAPE7 TNS-RFSS |
Produkt ist nicht verfügbar |
|
| BFG505/X,215 | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |