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BFL4004-1E

BFL4004-1E onsemi


BFL4004.pdf
Hersteller: onsemi
Description: MOSFET N-CH 800V 4.3A TO220F-3FS
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220F-3FS
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Technische Details BFL4004-1E onsemi

Description: MOSFET N-CH 800V 4.3A TO220F-3FS, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220F-3FS, Power Dissipation (Max): 2W (Ta), 36W (Tc), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.

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BFL4004-1E BFL4004-1E onsemi BFL4004.pdf Description: MOSFET N-CH 800V 4.3A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFL4004-1E BFL4004.pdf
BFL4004-1E
Hersteller: onsemi
Description: MOSFET N-CH 800V 4.3A TO220F-3FS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V
Power Dissipation (Max): 2W (Ta), 36W (Tc)
Supplier Device Package: TO-220F-3FS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH