 
BFN19H6327XTSA1 Infineon Technologies
 Hersteller: Infineon Technologies
                                                Hersteller: Infineon TechnologiesTrans GP BJT PNP 300V 0.2A 1000mW Automotive 4-Pin(3+Tab) SOT-89 T/R
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Technische Details BFN19H6327XTSA1 Infineon Technologies
Description: TRANS PNP 300V 0.2A SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT89, Grade: Automotive, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 1 W, Qualification: AEC-Q101. 
Weitere Produktangebote BFN19H6327XTSA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
|   | BFN19H6327XTSA1 | Hersteller : Infineon Technologies |  Description: TRANS PNP 300V 0.2A SOT89 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT89 Grade: Automotive Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1 W Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |
|   | BFN19H6327XTSA1 | Hersteller : Infineon Technologies |  Bipolar Transistors - BJT AF TRANSISTORS | Produkt ist nicht verfügbar |