Technische Details BFP420H6801 Infineon technologies
Description: RF TRANSISTOR, X BAND, NPN, Part Status: Active, Supplier Device Package: PG-SOT343-4-2, Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz, Frequency - Transition: 25GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V, Voltage - Collector Emitter Breakdown (Max): 4.5V, Current - Collector (Ic) (Max): 60mA, Power - Max: 210mW, Gain: 21dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-82A, SOT-343, Packaging: Bulk.
Weitere Produktangebote BFP420H6801
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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BFP420H6801 | Infineon Technologies |
Description: RF TRANSISTOR, X BAND, NPNPart Status: Active Supplier Device Package: PG-SOT343-4-2 Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Frequency - Transition: 25GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Voltage - Collector Emitter Breakdown (Max): 4.5V Current - Collector (Ic) (Max): 60mA Power - Max: 210mW Gain: 21dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
BFP 420 H6801 | Infineon Technologies |
RF Bipolar Transistors RF BIP TRANSISTOR |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BFP420H6801 |
![]() |
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, X BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Description: RF TRANSISTOR, X BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4-2
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Frequency - Transition: 25GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Voltage - Collector Emitter Breakdown (Max): 4.5V
Current - Collector (Ic) (Max): 60mA
Power - Max: 210mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BFP 420 H6801 |
![]() |
Hersteller: Infineon Technologies
RF Bipolar Transistors RF BIP TRANSISTOR
RF Bipolar Transistors RF BIP TRANSISTOR
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen
Stück im Wert von UAH



